The new 12-layer HBM3E, according to SK hynix, will meet the world's highest standards in areas, including speed, capacity, and stability. Reaching speeds of up to 9.6Gbps, the new chips have a 50 percent increased capacity by stacking 12-layers of 3GB DRAM chips at the same thickness as the previous 8-layer HBM3E. According to SK hynix, each DRAM chip has been made 40 percent thinner and stacked vertically using TSV technology.

By using the Advanced MR-MUF process new chips also have 10 percent higher heat dissipation performance compared to the previous generation, and secure the stability and reliability of the product through enhanced warpage controlling.

"SK hynix has once again broken through technological limits demonstrating our industry leadership in AI memory," said Justin Kim, President (Head of AI Infra) at SK hynix. "We will continue our position as the No.1 global AI memory provider as we steadily prepare next-generation memory products to overcome the challenges of the AI era."

As said, the first 12-layer HBM3E products will be supplied to customers within the year, which is quite an achievement considering SK hynix shipped 8-layer HBM3E to customers in March this year.