The gear is a 3D stacked cell structure flash memory which is being billed as the world's first 256-gigabit 48-layer BiCS device and uses triple-level cell, TLC technology. Sample shipments will start in September.

BiCS FLASH is based on a leading-edge 48-layer stacking process. Toshiba said that this surpasses the capacity of mainstream two dimensional NAND Flash memory while enhancing write/erase reliability endurance and boosting write speeds.

The new 256 Gb device is targeted at consumer SSD, smartphones, tablets and memory cards, and enterprise SSD for data centres.

Since announcing prototype BiCS FLASH technology in June 2007, Toshiba has continued development towards optimization for mass production. Toshiba said it will promote migration to BiCS FLASH by rolling out a product portfolio that emphasizes large capacity applications, such as SSD.

Toshiba is readying for mass production of BiCS FLASH in a new Fab2 at Yokkaichi Operations, its production site for NAND flash memories. Fab2 will be completed in the first half of 2016.